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Az photoresist. 0µm and works well with both organic (MIF) and .

  • Az photoresist. The high resolution and adhesion of the AZ ® 1505 make this resist a commonly used resist mask for Cr etching in photo mask production. The fully cross linked features are extremely thermally stable and etch resistant. For this purpose, we recommend the AZ ® 1500 series for resist film thicknesses of 500 nm to 3 µm, the AZ ® ECI 3000 series for 1-4 µm resist film thickness, or the AZ ® 4500 series for films of several 10 µm thickness. 974 µm . Swing Curve AZ® 7908 Photoresist AZ® 300 MIF developer 5 sec spray, 55 sec puddle 115°C 120°C 125°C AZ® 7908 Photoresist Film Thickness = 0. AZ 435MIF and AZ 400K 1:3 or AZ 400K 1:4 are recommended. The information contained herein is, to the best of our knowledge, true and accurate, but all recommendations are made without guarantee because the AZ 3312 Photoresist (18 cps) DOF on Silicon for 0. 5% NaOH solution and metal ion free developers like AZ 726 MIF. eu e-Mail: sales@microchemicals. The two products were compared for coat uniformity, thermal stability, and AZ® 3300 Series Crossover Photoresists Performance AZ® 3300 Series Crossover Photoresists Page 3 of 5 n Performance Summary ®AZ 3312 Photoresist AZ® 3318-D Photoresist Exposure i-line g-line i-line g-line Film Thickness (μm) 1. wet etching or plating and a AZ ® 1512 HS Positive Thin Resists for Wet Etching . The AZ ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. AZ 300T, AZ 400T, and AZ Kwik Strip removers are recommended. AZ ® 9260 at a film thickness of 12. High transparency and chemical amplification provide aspect ratios and photospeed not possible with conventional DNQ type photoresists. POST EXPOSE BAKE. 0200 0. wet etching or plating and a AZ 400K developers (AZ 400K 1:4 or AZ 400K 1:3) or AZ 421K developer. AZ 400K 1:3 or AZ 421K (unbuffered) are recommended for resist film thicknesses above 12µm. 6 µm, with a resist film thickness of 3. 0100 Cauchy Coefficients A B C Unbleached 1. AZ 3300 Photoresists are medium resolution (0. 0250 0. wet etching or plating and a Overview. 83 1. HARD BAKE AZ® 12XT-20PL-10 Chemically Amplified Positive Tone Photoresists General Information AZ® 12XT for 5 - 15 µm Resist Film Thickness (i-line) The AZ® 12XT is a chemically amplified thick positive resist with superior photospeed and aspect ratio characterized by its excellent environmental stability and suitability for plating and RIE etc applications. AZ 400K 1:4 provides improved developer selectivity for thinner films. 6 µm Dense Lines, FT = 0. As a general rule, PEB temperatures should be in the 100 to 110C range. AZ 40XT photoresist is compatible with industry standard 0. AZ IPS-6000 photoresist fit in as a solution to difficulties in solvent strip process. 0150 0. 0400 0. 188 2. 3 - 5 µm (diluted down to 1 µm), which allows an adjustable and strong undercut (negative resist profile) even at small resist film thicknesses for also ambitious lift-off applications. 130°C on (e. 50 1. Contact your AZ products representative for application/substrate specific remover recommendations and data sheets. There are several reasons to select the AZ4620 as a sacrificial layer. AZ® 9200 Photoresist High-Resolution Thick Resist Product Data Sheet AZ® 9200 thick film photoresist is designed for the more demanding higher-resolution thick resist require-ments. AZ ® MIR 701 (11CPS) High Resolution and Temperature Stability . 6963 n 1. AZ ® 40XT for 15 - 100 µm Resist Film Thickness (i-line) The chemically amplified AZ ® 40 XT is an ultra thick resist whose high viscosity allows very large resist film thicknesses via a single coating. 50 3. 0350 0. 8 1. 4 to 5. The AZ® 1500 series is suitable for fi lm thicknesses from 500 nm to 3 μm, the AZ® ECI 3000 series for resist fi ®lms from 1 - 4 μm, or the AZ 4500 series for fi lm thicknesses up to several 10 μm. The AZ ® P4000 positive resist series with its members AZ ® P4110, AZ ® P4330, AZ ® P4620 and AZ ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e. AZ photoresist process conditions: Pre-bake at 100 °C for 60 seconds (DHP) Exposure: 1 line step exposure machine/contact Photoresists, developers, remover, adhesion promoters, etchants, and solvents Phone: +49 731 36080-409 www. AZ IPS-6000 is fast, MIF developer compatible and requires no post bake re-hydration delays. 0 – 4. AZ Photoresists are compatible with most commercially available wafer processing equipment. 0 µm; Can be used in dry and wet etch process environments; Compatible with g-line, i-line, or broadband exposure tools AZ® 125nXT Photoresist AZ 125nXT Series Photoresists are advanced, negative tone photo-polymer materials optimized for use in high aspect ratio plating, MEMs, and extreme RIE etch applications. 8 the highly cross-linked resist masks require much stronger stripper and longer solvent strip times. AZ P4620 Photoresist is a general purpose i-line/h-line/g-line sensitive material engineered for performance in most electro-plating and other metal deposition process environments. General Information. AZ 1500 Series Photoresists are general purpose, g-line/broadband sensitive materials optimized for substrate adhesion in wet etch process environments. 14,15 It is a photo-definable positive resist, consequently simplifying the overall process through standard photolithography AZ P4000 Series Photoresists are general purpose i-line/h-line/g-line sensitive materials engineered for performance in most electro-plating and other metal deposition process environments. AZ Developer 1:1 may be used in applications requiring zero etch rate on Aluminum substrates. 16 x 10-4 µm4 resist not yet developed (Fig. 28µm dense lines @ 0. AZ® 9200 photoresist can be used as a higher resolution replacement for AZ® P4000 photoresist. 7 Focus Latitude (μm) >1 >1. 50 2. 0 – 3. Although they are positive photoresists (and may even be used in that way) comprised of a novolak resin and naphthoquinone diazide as photoactive compound (PAC) they are capable AZ® P4903 Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620 General Information The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e. With low demands on the resolution, the PL 177 is a cost-eff ective alternative. POST EXPOSE BAKE A PEB is optional for AZ 10XT. 0µm AZ P4330-RS 3. AZ® 15nXT (450 CPS) Photoresist Negative Acting Thick Resist for Cu RDL, TSV, and other plating & etch applications Lithographic and Plating Performance Comparison at 10 µm FT on Cu wafers January 2009 All AZ 1500series resists are compatible with all common developers used for - positive photoresists, like AZ 340 (diluted 1:5), 0. 0100 0. Dive deeper Patterning Enhancement Materials AZ 12XT-20PL Series Photoresists are advanced chemically amplified i-line resists optimized for plating, TSV, and RIE etch applications. However, no representations or warranties, either express or implied, whether of merchantable quality, fitness for any particular AZ nLOF™ 2000 series photoresists are compatible with industry standard 0. AZ 10XT is sensitive to exposure energy in the 365-435nm wavelength range. Hereby the upper resist edges rounden, while the contact points of resist and substrate do not move (compare image series Spray or immersion developing in AZ 400K series developers is recommended. 55 0. 0500 300 350 400 450 500 550 600 650 AZ ® 40XT Chemically Amplified Thick Photoresist . 7 – 3. 0150 k 0. 0µm and works well with both organic (MIF) and The photo active compound of AZ® and TI photoresists belongs to the group of diazonaphtho-quinones (DNQ). AZ ® 701 MIR Series for 0. AZ 400K 1:4 developer recommended. It can be pro-cessed on the same exposure tools using similar processing conditions; it is developed from the same chemistry AZ® 1500 Series Photoresists. 0 µm Resist Film Thickness (g-, h- and I-line) As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ ® 701 MIR (11CPS) is optimised especially for dry chemical etching of fine to very fine structures. 0300 0. A wide film thickness range. Under normal process conditions, AZ 1500 strips readily in removers designed for DNQ/novolac type photoresists. 0 – 5. During exposure with UV-light (typically < 440 nm) the DNQ transforms (accompanied by the release AZ® EBR Solvent or AZ® EBR 70/30 Developers AZ® ®400K 1:3 or 1:4, AZ 421K, AZ Developer 1:1, AZ 340 Removers AZ ® 300T, AZ 400T, AZ Kwik Strip AZ® P4000 Series Positive Tone Photoresists Grade Film Thickness Range AZ P4110 1. 6 1 AZ® 3300-F Series Crossover Photoresists Page 2 of 4 n Coated resist thickness: 50µm Strip: AZ 400T @ 75C Mask CD: 8µm square holes 1:1 pitch Coated resist thickness: 25µm Strip: AZ 400T @ 75C Mask CD: 50µm round holes 1:1 pitch Coated resist thickness: 60µm Strip: AZ 400T @ 75C Process Step Parameters Coat 25, 50, 60, and 100µm thick AZ 125nXT-10B on Cu substrate Descum O2 Plasma Copper Plating AZ ® P4620 Positive Thick Resist - AZ ® P4110, AZ ® P4330, AZ ® P4903, AZ ® P4620. 6 1. 0000 0. In the case of hydrofl uoric AZ® P4903 Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620 General Information The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e. eu-4-MicroChemicals GmbH - Exposure of Photoresists The Photo Reaction Positive and Image Reversal Resists The photo active compound of AZ® and TI photoresists belongs to the group of The information contained herein is, as far as we are aware, true and accurate. Excellent for Through Silicon Via (TSV) applications. 749 Resolution (μm) 0. Fast, negative tone cross linking photoresists featuring extreme thermal stability, superb dry etch resistance, and superior high energy ion implant blocking power. 60NA (i-line) Single puddle develop in AZ 300MIF AZ® 5214E-IR AZ 5214E-IR is an image reversal photoresist that may be processed in either positive or negative tone. wet etching or plating and a AZ ® ECI 3012 High Resolution with Broad Process Window . 38%) TMAH AZ P4000 Series resist(s) Ellipsometrc Absorbance Normalized to 1/µm 0. Coated thickness range of 0. 00 2. 7 0. 99 Resolution (μm) 0. Formation of Bubbles in the Resist Film The photochemistry of the AZ® 5214E and TI image reversal resists is DNQ-based which is why nitrogen is released during the exposure. 0050 0. MIF developers not recommended. As a general rule, PEB temperatures should be in the 90 ° to 100C range. Fast in all exposure wavelengths between 350 and 450nm. 17 1. 00 0. 076 1. AZ 4999 Photoresist is available in 5 Liter HDPE bottles. MEMS / Ink Jet FT : >30 µm Lift-off TSV / Etch Implant, Plating Copper/UBM Plating Gold Plating Solder / Metal Plating AZ MiR 703 Positive Photoresist Overview. It is highly dissolved in acetone, AZ R 100 Remover, PGMEA based solvent and other stripper solvent which commercially available for positive tone resist AZ® 50XT Photoresist Exposure Latitude on Si, 20µm Contact Holes, FT = 25µm 2100 mJ/cm 22200 mJ/cm 2300 mJ/cm2 2500 mJ/cm 2 2400 mJ/cm2 2600 mJ/cm 2700 mJ/cm2 2800 microstructures. 7 %µµµµ 1 0 obj >/Metadata 169 0 R/ViewerPreferences 170 0 R/PageLabels 171 0 R>> endobj 2 0 obj > endobj 3 0 obj >/ExtGState >/Font >/ProcSet[/PDF/Text AZ edge bead removers are high purity, effective, low cost solvents designed for photoresist edge bead removal. 0 - >20µm* AZ® LNR-003 Negative Resist for Lift-off Applications General Information AZ® LNR-003 is a negative resist for film thicknesses of approx. DEVELOPING. Fields of Application of the Resist Mask. der-etching. The etching thickness of AZ photoresist ranges from 1 μm to 150 μm and more. Our materials are renowned for their highly uniform coating quality on large glass substrates. AZ® 3300 Series Crossover Photoresists Performance AZ® 3300 Series Crossover Photoresists Page 3 of 5 n Performance Summary ®AZ 3312 Photoresist AZ® 3318-D Photoresist Exposure i-line g-line i-line g-line Film Thickness (μm) 1. 105), which means that after the fl ood exposure the resist can only be devel-oped with a slower rate. 65um design rules), high thermal stability materials optimized for metal RIE etch or plating process environments. AZ photoresist features: Suitable for high resolution (lift-off) processes. At 4000 rpm, a The information contained herein is, as far as we are aware, true and accurate. 0µm AZ P4400 4. . AZ P4000 resists exhibit excellent adhesion to metal seed layers and compatibility with nearly all plating solutions including gold-cyanide. AZ® P4620 Photoresist. 8 AZ IPS-6000 is an advanced chemically amplified positive tone photoresist optimized for use in high aspect ratio plating, MEMs, and extreme RIE etch applications. 0450 0. SB: 90°C, 60 sec; PEB: 110°C, 60 sec. A PEB is required for proper imaging of AZ 40XT. 26N (2. Items in this series: AZ P4110 Photoresist (Quart) AZ P4110 Photoresist (Gallon) AZ P4210 Photoresist (Quart) AZ P4210 Photoresist (Gallon) AZ P4330 Photoresist (Quart) AZ P4330 Photoresist (Gallon) AZ P4400 Photoresist (Quart) AZ P4400 AZ® nLoF 5510 Photoresist @ 1. Film thicknesses from 20 to 120+µm are achievable. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists. It provides high resolution with superior aspect ratios, as well as wide focus and exposure latitude and good sidewall profiles. AZ® 9200 photore- AZ® P4903 Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620 General Information The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e. While AZ 1500-family and AZ 1514H are optimised for best process latitude at 50 60 seconds development time, AZ 1500HS- family performs best at - AZ 5214 E Photoresist Image Reversal Photoresist GENERAL INFORMATION This special photoresist is intended for lift-off-techniques which call for a negative wall profile. Develop in AZ 300MIF or 917MIF developer. g. HARD BAKE The AZ ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. Optical Parameters - Absorptivity. Recommended materials include PTFE, stainless steel and high-density poly-ethylene and -propylene. Features. 00 175 200 225 250 275 300 325 350 375 400 425 450 475 500 AZ® 15nXT (115CPS) Thick Negative Resist for Plating General Information AZ® 15nXT (115CPS) for 3 - 6 µm Resist Film Thickness (i-line) The AZ® 15nXT (115CPS) is a negative resist for film thicknesses up to approx. AZ® 9200 photoresist is optimized for both coil plating and top pole recor-ding head applications. %PDF-1. 0 – 6. Higher normality (less dilute) developers will improve photospeed but Our photoresists are light-sensitive organic compounds used to form patterned coatings on surfaces, primarily for the production of integrated circuits and for panel displays. 54 NA i-line stepper Post Exposure Bake Hotplate 120°C, 60 sec AZ® 300 MIF Developer, 5 sec spray, 55 sec puddle at 21°C 120 110 100 90 AZ® P4620 Photoresist Data Package. 0. wet etching or plating and a lower photo active compound Special resist formulations are required to speed drying and prevent leveling of the wet film. 0 µm. Their presence in photoresists reduces - as compared with pure Novolak resin - the alkaline solubility by more than one order of magnitude. Available in both dyed and un-dyed versions, this series covers a coated thickness range of approximately 0. AZ 300MIF is recommended. However, no representations or warranties, either express or implied, whether of merchantable quality, fitness for any particular AZ 1500-SFD Photoresist . Excellent stability in a wide variety of plating bath chemistries. For positive/negative graphics. microchemicals. AZ ® 10XT (520 cP) photoresist was tested side by side vs. 8 0. 0µm film thickness 0. The lateral resolution depends on the resist film thickness and reaches down to sub-µm. 0340 x 10-2 µm2 8. In addition to the resin, photo-active substances and solvents, AZ® and TI photoresists can also contain anti-oxidising agents, adhesion promoters and substances for modifying the surface tension for the rapid smoothing of applied resist fi lms. At IMM we strive for industry leadership in service and customer satisfaction and take pride in exceeding your expectations! We stock a wide variety of Photoresists and Anti-Reflective Coatings along with the companion Developers, Thinners, Strippers, and High Purity Process Chemicals to meet the demands of almost any micro-fabrication environment! ®AZ 3312-F Photoresist AZ® 3330-F Photoresist Exposure i-line i-line Film Thickness (μm) 1. Film thickness is set by the number of spray passes and imaging is achieved using standard exposure wavelengths and developers. The AZ ® ECI 3000 series is a modern, state-of-the-art positive resist series. AZ 40XT requires exposure energy at the 365nm wavelength. 75 - 2. A PEB is required for proper imaging of AZ 12XT. Wet chemical etching requires an optimized adhesion to the substrate. AZ 3312 Photoresist (18 cps) AZ ® 1518 Positive Thin Resists for Wet Etching . 0µm AZ P4210 2. AZ nLOF™ materials are extremely thermally AZ® 1500, 4500, 9200, or ECI 3000 series), or, respectively, from approx. 0µm AZ P4620 6. PEB temperatures and times may be application specific. g. The AZ MiR 703 Positive Photoresist is a medium resolution i-line sensitive Photoresist optimized for line and contact hole pattern layers. AZ® P4903 Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620 General Information The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e. AZ® 15nXT (115CPS) Thick Negative Resist for Plating General Information AZ® 15nXT (115CPS) for 3 - 6 µm Resist Film Thickness (i-line) The AZ® 15nXT (115CPS) is a negative resist for film thicknesses up to approx. the AZ® 6600 series the AZ® 701 MiR, and the AZ® 5214E) also depending on the process parameters such as the softbake conditions. 5 µm at 4000 rpm. 1 Focus Latitude (μm) 1. 00 1. DEVELOPING AZ 10XT series photoresists are compatible with MIF (TMAH) or inorganic developers. 38%) TMAH developers. 975 µm Softbake Hotplate 100°C, 60 sec Exposure NIKON® 0. 6154 1. The AZ photoresist is commonly used as a stencil for the electroplating of metals such as copper (Cu), gold (Au) and nickel (Ni). DEVELOPING AZ 12XT series photoresists are compatible with industry standard 0. HARD BAKE Hard baking (post develop bake) improves adhesion in wet etch or plating applications and improves pattern stability in dry etch or deposition chambers. 6796 k 0. At 4000 rpm, a Modeling Parameters (AZ® P4000 Photoresist at 435 nm) Refractive Index Unbleached Bleached n 1. njto zuzihhn jtcrg jhhci jipdj pymqy ibwtv ohsls qciszjp zrb